| 光谱学与光谱分析 |
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| Effect of Hydrogen Passivation on Photoluminescence Intensity of Si Nanocrystals |
| CHEN En-guang1,YI Li-xin1*,WANG Shen-wei1,LIU Rao-ping1,SU Meng-chan1,TANG Ying2,WANG Yong-sheng1 |
1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
2. Department of Physics, Beijing Jiaotong University, Beijing 100044, China |
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Abstract SiO/SiO2 superlattices samples were prepared on Si substrates by reactive evaporation of SiO powder in vacuum or an oxygen atmosphere. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, H+ with a dose of 3.0×1014·cm-2 and 3.0×1015·cm-2 respectively was implanted into these samples with formed Si nanocrystals at 20 keV. The PL spectra showed that the PL intensities of samples with H+ implanting dropped sharply compared with the samples without H+ implanting. The PL intensity increased gradually with increasing re-annealing temperature; and it even could exceed that of samples without H+ implanting if the dose of H+ was enough. Our further investigations showed that the varieties of the PL intensities were mainly dependent on the area density of the defects formed in the samples, and also the area density of the defects was influenced by the dose of H+ and the further re-annealing temperatures.
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Received: 2006-10-23
Accepted: 2007-03-12
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Corresponding Authors:
YI Li-xin
E-mail: lxyi@bjtu.edu.cn
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